FQD2N60CTM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQD2N60CTM
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 2.5 W 600 V Continuous Drain Current (ID):1.9 A 12 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 600 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 650 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 18 A |
| Current Rating | 1.9 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 235 pF |
| Continuous Drain Current (ID) | 1.9 A |
| Rds On Max | 4.7 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 24 ns |
| Element Configuration | Single |
| Fall Time | 28 ns |
| Rise Time | 25 ns |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 3.6 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
Stock: 448
Distributors
pcbx
pcbxUnit Price$0.52771
Ext.Price$0.52771
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.52771 | $0.52771 |
| 10 | $0.42192 | $4.21920 |
| 25 | $0.38636 | $9.65900 |
| 50 | $0.35380 | $17.69000 |
| 100 | $0.32398 | $32.39800 |
| 300 | $0.28667 | $86.00100 |
| 500 | $0.25366 | $126.83000 |
| 1000 | $0.23843 | $238.43000 |